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| MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.17 Symbol V DSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings 500 500 20 30 30 120 360 -55 ... +150 150 -55 ... +150 V V V V A A W C C C C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 6 g Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 .087 2 -0.25 100 TJ = 25C TJ = 125C 200 3 0.17 4 V %/k V %/k nA A mA Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers V DSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 5 mA BVDSS temperature coefficient VDS = VGS, ID = 250 A VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density VGS = 10 V, ID = 0.5 * ID25 30N50 Pulse test, t 300 s, duty cycle d 2 % (c) 2002 IXYS All rights reserved 94569-E (8/02) IXTH 30N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 5680 VGS = 0 V, VDS = 25 V, f = 1 MHz 635 240 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 1 , (External) 42 110 26 227 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 29 110 0.35 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 120 1.5 850 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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